MPX2010GP vs MPX2050GP Vergleich
Detaillierter Direktvergleich von MPX2010GP von STMicroelectronics und MPX2050GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ AktivNXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ AktivSpezifikationsvergleich
| Parameter | MPX2010GP | MPX2050GP |
|---|---|---|
| Marke | STMicroelectronics | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,20 | $9,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| Ausgangsspannungsbereich | 0 mV to 25 mV (10 V supply) | — |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| Versorgungsstrom | 6 mA DC typical | — |
| Response Time | 1 ms typical | [DATA_NEEDED: response time / bandwidth] |
| Linearity | [DATA_NEEDED: linearity %FS] | +/-0.05% to +/-0.1% of FSS (typ) |
| Temperature Compensation | On-chip, calibrated | — |
| Betriebstemperaturbereich | -40 C to +125 C | — |
| Storage Temperature Range | -40 C to +125 C | — |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | Male 0.19" (4.93 mm) Tube |
| Gehäuse / Bauform | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| Montageart | Through-Hole (SIP) | Through-Hole (SIP, vertical) |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| RoHS-Status | Compliant | — |
| Ausgangstyp | — | Analog Wheatstone Bridge (mV) |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Betriebstemperatur | — | 0C to +85C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |