MPX2010GP vs MPX2050GP Comparación
Comparación detallada lado a lado de MPX2010GP por STMicroelectronics y MPX2050GP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
MPX2010GP - 10 kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPX2010GP ✓ ActivoNXP Semiconductors
MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro
MPX2050GP ✓ ActivoComparación de especificaciones
| Parámetro | MPX2010GP | MPX2050GP |
|---|---|---|
| Marca | STMicroelectronics | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,20 | $9,85 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | [DATA_NEEDED: maximum overload pressure] |
| Sensitivity (Full-Scale Span) | 25 mV typical at 10 V excitation | — |
| Rango de tensión de salida | 0 mV to 25 mV (10 V supply) | — |
| Offset (Zero Pressure) | 0 mV nominal | — |
| Supply Voltage (Excitation) | 10 V DC typical (max per datasheet) | — |
| Corriente de alimentación | 6 mA DC typical | — |
| Response Time | 1 ms typical | [DATA_NEEDED: response time / bandwidth] |
| Linearity | [DATA_NEEDED: linearity %FS] | +/-0.05% to +/-0.1% of FSS (typ) |
| Temperature Compensation | On-chip, calibrated | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Storage Temperature Range | -40 C to +125 C | — |
| Port Style | Male, 0.19 inch (4.93 mm) tube, vented gauge | Male 0.19" (4.93 mm) Tube |
| Encapsulado / Carcasa | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| Tipo de montaje | Through-Hole (SIP) | Through-Hole (SIP, vertical) |
| Media Compatibility | Dry gases (silicone gel isolation) | — |
| Estado RoHS | Compliant | — |
| Tipo de salida | — | Analog Wheatstone Bridge (mV) |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Temperatura de funcionamiento | — | 0C to +85C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Compensation | — | On-chip temperature compensated and laser-trimmed |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |