MRF5S19060NBR1 vs MRF5S19060MBR1 Comparison

Detailed side-by-side comparison of MRF5S19060NBR1 by NXP Semiconductors and MRF5S19060MBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Active
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Specification Comparison

Parameter MRF5S19060NBR1 MRF5S19060MBR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs RF Amplifiers
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $25.40 $16.40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. 12 W
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14 dB
Drain Current 750 mA (typical operating DC) —
Package TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Mounting Type Surface Mount (SMD) —
Pin Count 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS RF Power Field Effect Transistor
RoHS Status [DATA_NEEDED: RoHS compliance status] —
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] —
Typical Operating Frequency — 1990 MHz
Drain-Source Voltage (Rated) — 65 V
Nominal Drain Operating Voltage — 28 V
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Package Outline — Case 1486-03, Style 1
Mounting Style — Flange / surface mount with thermal pad
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

Datasheets & Resources

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