MRF5S19060NBR1 vs MRF5S19060MBR1 Сравнение
Подробное сравнение бок о бок MRF5S19060NBR1 от NXP Semiconductors и MRF5S19060MBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF5S19060NBR1 ✓ АктивенNXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 ObsoleteСравнение характеристик
| Параметр | MRF5S19060NBR1 | MRF5S19060MBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | RF Amplifiers |
| Статус жизненного цикла | Активен | Obsolete |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $25,40 | $16,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Dual Die (2 x N), Common Source | — |
| Frequency Band | 1930 MHz to 1990 MHz | 1.93 GHz to 1.99 GHz |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | 12 W |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | 14 dB |
| Drain Current | 750 mA (typical operating DC) | — |
| Корпус | TO-272 WB-4 (overmolded plastic) | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) |
| Тип монтажа | Surface Mount (SMD) | — |
| Число выводов | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | RF Power Field Effect Transistor |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status] | — |
| Уровень MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Typical Operating Frequency | — | 1990 MHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Nominal Drain Operating Voltage | — | 28 V |
| Test Current (Drain) | — | 750 mA |
| Drain Current Rating (Leakage Spec) | — | 10 uA |
| VSWR Tolerance | — | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg |
| Input Matching | — | Internally matched |
| ESD Protection | — | Integrated |
| Package Outline | — | Case 1486-03, Style 1 |
| Способ монтажа | — | Flange / surface mount with thermal pad |
| Maximum Junction Temperature | — | 200 degree C |
| Packaging | — | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) |
| Target Application | — | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage |