MRF5S19060NBR1 vs MRF5S19060MBR1 Comparação

Comparação detalhada lado a lado de MRF5S19060NBR1 por NXP Semiconductors e MRF5S19060MBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Ativo
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Comparação de especificações

Parâmetro MRF5S19060NBR1 MRF5S19060MBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs RF Amplifiers
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $25,40 $16,40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. 12 W
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14 dB
Drain Current 750 mA (typical operating DC) —
Encapsulamento TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Tipo de montagem Surface Mount (SMD) —
Contagem de pinos 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS RF Power Field Effect Transistor
Status RoHS [DATA_NEEDED: RoHS compliance status] —
Nível MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Typical Operating Frequency — 1990 MHz
Drain-Source Voltage (Rated) — 65 V
Nominal Drain Operating Voltage — 28 V
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Package Outline — Case 1486-03, Style 1
Estilo de montagem — Flange / surface mount with thermal pad
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

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