MRF5S19060NBR1 vs MRF5S19060MBR1 Vergleich

Detaillierter Direktvergleich von MRF5S19060NBR1 von NXP Semiconductors und MRF5S19060MBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Aktiv
NXP Semiconductors
MRF5S19060MBR1 MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale

MRF5S19060MBR1 Obsolete

Spezifikationsvergleich

Parameter MRF5S19060NBR1 MRF5S19060MBR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs RF Amplifiers
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $25,40 $16,40
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz 1.93 GHz to 1.99 GHz
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. 12 W
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) —
Power Gain 14 dB at 1.99 GHz 14 dB
Drain Current 750 mA (typical operating DC) —
Gehäuse TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4)
Montageart Surface Mount (SMD) —
Pin-Anzahl 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS RF Power Field Effect Transistor
RoHS-Status [DATA_NEEDED: RoHS compliance status] —
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
Typical Operating Frequency — 1990 MHz
Drain-Source Voltage (Rated) — 65 V
Nominal Drain Operating Voltage — 28 V
Test Current (Drain) — 750 mA
Drain Current Rating (Leakage Spec) — 10 uA
VSWR Tolerance — 5:1 @ 28 Vdc, 1990 MHz, 12 W avg
Input Matching — Internally matched
ESD Protection — Integrated
Package Outline — Case 1486-03, Style 1
Montagestil — Flange / surface mount with thermal pad
Maximum Junction Temperature — 200 degree C
Packaging — Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix)
Target Application — PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage

Datenblätter & Ressourcen

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