MRF5S19060NBR1 vs MRF5S19060MR1 Comparison

Detailed side-by-side comparison of MRF5S19060NBR1 by NXP Semiconductors and MRF5S19060MR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19060NBR1 MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19060NBR1 ✓ Active
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ Active

Specification Comparison

Parameter MRF5S19060NBR1 MRF5S19060MR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $25.40 $25.60
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP (formerly Freescale Semiconductor)
Transistor Type N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) N-Channel LDMOS RF Power MOSFET
Configuration Dual Die (2 x N), Common Source —
Frequency Band 1930 MHz to 1990 MHz —
Output Power (P1dB) 60 W (CW/peak) —
Output Power (Average) 12 W avg. —
Drain Supply Voltage 28 V (typical) —
Drain-Source Voltage (Vdss) 65 V (max) 65 V (max)
Power Gain 14 dB at 1.99 GHz —
Drain Current 750 mA (typical operating DC) —
Package TO-272 WB-4 (overmolded plastic) TO-270 WB-4 (Ceramic)
Mounting Type Surface Mount (SMD) Surface Mount / Flange Mount
Pin Count 5 —
Peak Reflow Temperature 260 C —
Maximum Power Dissipation (Absolute) 218.8 W —
Technology Silicon LDMOS —
RoHS Status [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] [DATA_NEEDED: MSL rating]
Part Number — MRF5S19060MR1
Frequency Range — 1930 MHz to 1990 MHz
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
Test Signal — 2 x N-CDMA
Operating Class — Class AB

Datasheets & Resources

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