MRF5S19060NBR1 vs MRF5S19060MR1 Comparación
Comparación detallada lado a lado de MRF5S19060NBR1 por NXP Semiconductors y MRF5S19060MR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ ActivoComparación de especificaciones
| Parámetro | MRF5S19060NBR1 | MRF5S19060MR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $25,40 | $25,60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP (formerly Freescale Semiconductor) |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | N-Channel LDMOS RF Power MOSFET |
| Configuration | Dual Die (2 x N), Common Source | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| Encapsulado | TO-272 WB-4 (overmolded plastic) | TO-270 WB-4 (Ceramic) |
| Tipo de montaje | Surface Mount (SMD) | Surface Mount / Flange Mount |
| Recuento de pines | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Part Number | — | MRF5S19060MR1 |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain Current (Id) | — | 750 mA |
| Output Power (Pout, avg) | — | 12 W (N-CDMA) |
| Output Power (Pout, PEP) | — | 60 W (typical) |
| Power Gain (Gps) | — | 14 dB (typical) |
| Drain Efficiency (etaD) | — | 45% (typical) |
| Operating Voltage | — | 28 V |
| Test Signal | — | 2 x N-CDMA |
| Operating Class | — | Class AB |