MRF5S19060NBR1 vs MRF5S19060MR1 Vergleich
Detaillierter Direktvergleich von MRF5S19060NBR1 von NXP Semiconductors und MRF5S19060MR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
MRF5S19060MR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF5S19060NBR1 | MRF5S19060MR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,40 | $25,60 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP (formerly Freescale Semiconductor) |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | N-Channel LDMOS RF Power MOSFET |
| Configuration | Dual Die (2 x N), Common Source | — |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | — |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | 65 V (max) |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| Gehäuse | TO-272 WB-4 (overmolded plastic) | TO-270 WB-4 (Ceramic) |
| Montageart | Surface Mount (SMD) | Surface Mount / Flange Mount |
| Pin-Anzahl | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Part Number | — | MRF5S19060MR1 |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain Current (Id) | — | 750 mA |
| Output Power (Pout, avg) | — | 12 W (N-CDMA) |
| Output Power (Pout, PEP) | — | 60 W (typical) |
| Power Gain (Gps) | — | 14 dB (typical) |
| Drain Efficiency (etaD) | — | 45% (typical) |
| Operating Voltage | — | 28 V |
| Test Signal | — | 2 x N-CDMA |
| Operating Class | — | Class AB |