MRF5S19100HR vs MRF5S19100HR5 Comparison

Detailed side-by-side comparison of MRF5S19100HR by NXP Semiconductors and MRF5S19100HR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF5S19100HR MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR ✓ Active
NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Specification Comparison

Parameter MRF5S19100HR MRF5S19100HR5
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $44.00 $25.40
Manufacturer NXP Semiconductors —
Part Family MRF5S19090 / MRF5S19100 —
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 1930 - 1990 MHz —
Output Power (Avg) 22 W (2-carrier N-CDMA) —
Output Power (PEP) 100 W (typical, single tone) —
Power Gain 13.9 dB (typical at Pout = 22 W) —
Drain Efficiency >30% (typical, 2-carrier) —
Drain-Source Voltage (Max) 65 V —
Drain Operating Voltage 28 V nominal —
Quiescent Current (IDQ) 1000 mA —
Gate-Source Voltage (Max) [DATA_NEEDED: VGS maximum rating] —
Operating Junction Temperature -40C to +200C —
Package NI-780 (ceramic flange) —
Mounting Type Flange / bolt-down, surface-mount RF Chassis Mount / Flange
Polarity / Channel N-Channel, dual-die —
ESD Protection Gate-source ESD diodes integrated Yes (per datasheet)
RoHS Status Compliant (per NXP product page) [DATA_NEEDED: rohs status]
Halogen Free [DATA_NEEDED: halogen-free status] —
Storage Temperature -65C to +200C (per NXP RF Power standard) —
Transistor Type — LDMOS (RF Power)
Technology — N-Channel MOSFET
Frequency Band — 1.93 GHz to 1.99 GHz
Output Power (Pout) — 22 W
Power Gain at Test — 13.9 dB
Drain-Source Voltage Rated (Vdss) — 65 V
Test Voltage (Vd) — 28 V
Test Current (Id) — 1 A
Package / Case — NI-780 (3-pin ceramic flange)
Supplier Device Package — NI-780
Configuration — Single N-Channel
Part Status — Obsolete
Lead Finish — [DATA_NEEDED: lead finish]
Channel Temperature (Tj max) — [DATA_NEEDED: junction temp absolute maximum]

Datasheets & Resources

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