MRF5S19100HR vs MRF5S19100HR5 Comparação

Comparação detalhada lado a lado de MRF5S19100HR por NXP Semiconductors e MRF5S19100HR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S19100HR MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR ✓ Ativo
NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Comparação de especificações

Parâmetro MRF5S19100HR MRF5S19100HR5
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Obsolete
Status do estoque In Stock In Stock
Preço unitário (USD) $44,00 $25,40
Manufacturer NXP Semiconductors —
Part Family MRF5S19090 / MRF5S19100 —
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 1930 - 1990 MHz —
Output Power (Avg) 22 W (2-carrier N-CDMA) —
Output Power (PEP) 100 W (typical, single tone) —
Power Gain 13.9 dB (typical at Pout = 22 W) —
Drain Efficiency >30% (typical, 2-carrier) —
Drain-Source Voltage (Max) 65 V —
Drain Operating Voltage 28 V nominal —
Quiescent Current (IDQ) 1000 mA —
Gate-Source Voltage (Max) [DATA_NEEDED: VGS maximum rating] —
Temperatura de junção de operação -40C to +200C —
Encapsulamento NI-780 (ceramic flange) —
Tipo de montagem Flange / bolt-down, surface-mount RF Chassis Mount / Flange
Polarity / Channel N-Channel, dual-die —
ESD Protection Gate-source ESD diodes integrated Yes (per datasheet)
Status RoHS Compliant (per NXP product page) [DATA_NEEDED: rohs status]
Livre de halogênio [DATA_NEEDED: halogen-free status] —
Storage Temperature -65C to +200C (per NXP RF Power standard) —
Tipo de transistor — LDMOS (RF Power)
Technology — N-Channel MOSFET
Frequency Band — 1.93 GHz to 1.99 GHz
Output Power (Pout) — 22 W
Power Gain at Test — 13.9 dB
Drain-Source Voltage Rated (Vdss) — 65 V
Test Voltage (Vd) — 28 V
Test Current (Id) — 1 A
Encapsulamento / Caixa — NI-780 (3-pin ceramic flange)
Supplier Device Package — NI-780
Configuration — Single N-Channel
Part Status — Obsolete
Lead Finish — [DATA_NEEDED: lead finish]
Channel Temperature (Tj max) — [DATA_NEEDED: junction temp absolute maximum]

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