MRF5S19100HR5 vs MRF5S19100HSR5 Comparison
Detailed side-by-side comparison of MRF5S19100HR5 by NXP Semiconductors and MRF5S19100HSR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF5S19100HR5 | MRF5S19100HSR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $25.40 | $42.60 |
| Transistor Type | LDMOS (RF Power) | N-Channel RF Power MOSFET (LDMOS) |
| Technology | N-Channel MOSFET | NXP HV5 LDMOS (5th generation, enhancement-mode) |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | 22 W (typical average, W-CDMA) |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Package / Case | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Mounting Type | Chassis Mount / Flange | Chassis / flange mount with screw |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| RoHS Status | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | — |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Drain-Source Voltage (VDS) | — | 65 V (maximum) |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Condition Power | — | 100 W peak (CW test condition) |
| Power Gain (Gp) | — | 13.9 dB (typical at 1.96 GHz) |
| Drain Efficiency | — | 28 percent (typical, W-CDMA Class-AB) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Test Frequency | — | 1.96 GHz |
| Package | — | NI-780S (ceramic, flanged, bolt-down) |
| Input Impedance | — | 50 ohm (internally matched) |
| Input Bias Type | — | Class-AB (gate biased above pinch-off) |
| Operating Temperature | — | -40 C to +200 C (junction, with derating) |