MRF5S19100HR5 vs MRF5S19100HSR5 Comparação
Comparação detalhada lado a lado de MRF5S19100HR5 por NXP Semiconductors e MRF5S19100HSR5 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF5S19100HR5 | MRF5S19100HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Obsolete | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $25,40 | $42,60 |
| Tipo de transistor | LDMOS (RF Power) | N-Channel RF Power MOSFET (LDMOS) |
| Technology | N-Channel MOSFET | NXP HV5 LDMOS (5th generation, enhancement-mode) |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | 22 W (typical average, W-CDMA) |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Encapsulamento / Caixa | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Tipo de montagem | Chassis Mount / Flange | Chassis / flange mount with screw |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| Status RoHS | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | — |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Drain-Source Voltage (VDS) | — | 65 V (maximum) |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Condition Power | — | 100 W peak (CW test condition) |
| Power Gain (Gp) | — | 13.9 dB (typical at 1.96 GHz) |
| Drain Efficiency | — | 28 percent (typical, W-CDMA Class-AB) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Test Frequency | — | 1.96 GHz |
| Encapsulamento | — | NI-780S (ceramic, flanged, bolt-down) |
| Input Impedance | — | 50 ohm (internally matched) |
| Input Bias Type | — | Class-AB (gate biased above pinch-off) |
| Temperatura de operação | — | -40 C to +200 C (junction, with derating) |