MRF5S19100HR5 vs MRF5S19100HSR5 Vergleich
Detaillierter Direktvergleich von MRF5S19100HR5 von NXP Semiconductors und MRF5S19100HSR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF5S19100HR5 | MRF5S19100HSR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,40 | $42,60 |
| Transistortyp | LDMOS (RF Power) | N-Channel RF Power MOSFET (LDMOS) |
| Technology | N-Channel MOSFET | NXP HV5 LDMOS (5th generation, enhancement-mode) |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | 22 W (typical average, W-CDMA) |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Gehäuse / Bauform | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Montageart | Chassis Mount / Flange | Chassis / flange mount with screw |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| RoHS-Status | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS status] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | — |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Drain-Source Voltage (VDS) | — | 65 V (maximum) |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Condition Power | — | 100 W peak (CW test condition) |
| Power Gain (Gp) | — | 13.9 dB (typical at 1.96 GHz) |
| Drain Efficiency | — | 28 percent (typical, W-CDMA Class-AB) |
| Operating Frequency | — | 1.93 GHz to 1.99 GHz |
| Test Frequency | — | 1.96 GHz |
| Gehäuse | — | NI-780S (ceramic, flanged, bolt-down) |
| Input Impedance | — | 50 ohm (internally matched) |
| Input Bias Type | — | Class-AB (gate biased above pinch-off) |
| Betriebstemperatur | — | -40 C to +200 C (junction, with derating) |