MRF6S18100NBR1 vs MRF5S19060NBR1 Comparison
Detailed side-by-side comparison of MRF6S18100NBR1 by NXP Semiconductors and MRF5S19060NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S18100NBR1 | MRF5S19060NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $68.90 | $25.40 |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Package / Case | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| Mounting Type | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Configuration | Single, common-source | Dual Die (2 x N), Common Source |
| RoHS Status | Compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance status] |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Package | — | TO-272 WB-4 (overmolded plastic) |
| Pin Count | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |
| MSL Level | — | [DATA_NEEDED: MSL moisture sensitivity level] |