MRF6S18100NBR1 vs MRF5S19060NBR1 比較
詳細な並列比較: MRF6S18100NBR1 メーカー: NXP Semiconductors および MRF5S19060NBR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF6S18100NBR1 | MRF5S19060NBR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $68.90 | $25.40 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| パッケージ / ケース | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| 実装タイプ | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Configuration | Single, common-source | Dual Die (2 x N), Common Source |
| RoHS ステータス | Compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance status] |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| パッケージ | — | TO-272 WB-4 (overmolded plastic) |
| ピン数 | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |
| MSLレベル | — | [DATA_NEEDED: MSL moisture sensitivity level] |