MRF6S18100NBR1 vs MRF5S19060NBR1 Сравнение
Подробное сравнение бок о бок MRF6S18100NBR1 от NXP Semiconductors и MRF5S19060NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
MRF5S19060NBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF6S18100NBR1 | MRF5S19060NBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Obsolete | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $68,90 | $25,40 |
| Тип транзистора | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| Корпус / Типоразмер | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| Тип монтажа | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Configuration | Single, common-source | Dual Die (2 x N), Common Source |
| Статус RoHS | Compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance status] |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| Корпус | — | TO-272 WB-4 (overmolded plastic) |
| Число выводов | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |
| Уровень MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |