MRF6S18100NBR1 vs MRF5S19060NBR1 비교
다음의 상세 나란히 비교: MRF6S18100NBR1 제조: NXP Semiconductors 및 MRF5S19060NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6S18100NBR1 | MRF5S19060NBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $68.90 | $25.40 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) |
| Application | RF Power Amplifier (GSM/GSM EDGE base station) | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | — |
| Drain-Source Voltage (V(BR)DSS) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Test Drain Current | 900 mA | — |
| Output Power (Pout) | 100 W | — |
| Power Gain (Gps) | 14.5 dB (typical at 1.99 GHz) | — |
| Drain Efficiency | [DATA_NEEDED: drain efficiency %] | — |
| 패키지 / 케이스 | TO-272 WB-4 | — |
| Supplier Device Package | TO-272 WB-4 | — |
| 실장 유형 | Surface Mount / Flange Mount | Surface Mount (SMD) |
| Configuration | Single, common-source | Dual Die (2 x N), Common Source |
| RoHS 상태 | Compliant (per NXP product page) | [DATA_NEEDED: RoHS compliance status] |
| Operating Mode | Class AB / Class C (per design) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB) | — | 60 W (CW/peak) |
| Output Power (Average) | — | 12 W avg. |
| Drain Supply Voltage | — | 28 V (typical) |
| Drain-Source Voltage (Vdss) | — | 65 V (max) |
| Power Gain | — | 14 dB at 1.99 GHz |
| Drain Current | — | 750 mA (typical operating DC) |
| 패키지 | — | TO-272 WB-4 (overmolded plastic) |
| 핀 수 | — | 5 |
| Peak Reflow Temperature | — | 260 C |
| Maximum Power Dissipation (Absolute) | — | 218.8 W |
| Technology | — | Silicon LDMOS |
| MSL 레벨 | — | [DATA_NEEDED: MSL moisture sensitivity level] |