MRF6S19100HR3 vs MRF6S27085HR3 Comparison

Detailed side-by-side comparison of MRF6S19100HR3 by NXP Semiconductors and MRF6S27085HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Active
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Active

Specification Comparison

Parameter MRF6S19100HR3 MRF6S27085HR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $95.00 $23.75
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF6S27085HR3
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS Lateral DMOS (LDMOS)
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) —
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
Package / Case NI-780H-2L (Case 465-06, Style 1) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
Mounting Type Flanged / Screw-mount with ceramic body Flange / Chassis mount with bolt-down thermal pad
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) —
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
RoHS Status Compliant (per NXP product page) Compliant per Freescale/NXP material declaration
Transistor Type — LDMOS, N-Channel, Enhancement-Mode, Lateral
Application — RF Power Amplifier
Operating Frequency — 2600 MHz to 2700 MHz
Test Frequency — 2.66 GHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Pin Count — 3 (Drain, Gate, Source)
Packaging — Tape & Reel (suffix HR3)

Datasheets & Resources

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