MRF6S19100HR3 vs MRF6S27085HR3 Vergleich

Detaillierter Direktvergleich von MRF6S19100HR3 von NXP Semiconductors und MRF6S27085HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Aktiv
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S19100HR3 MRF6S27085HR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $95,00 $23,75
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF6S27085HR3
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS Lateral DMOS (LDMOS)
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) —
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
Gehäuse / Bauform NI-780H-2L (Case 465-06, Style 1) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
Montageart Flanged / Screw-mount with ceramic body Flange / Chassis mount with bolt-down thermal pad
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) —
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
RoHS-Status Compliant (per NXP product page) Compliant per Freescale/NXP material declaration
Transistortyp — LDMOS, N-Channel, Enhancement-Mode, Lateral
Application — RF Power Amplifier
Operating Frequency — 2600 MHz to 2700 MHz
Test Frequency — 2.66 GHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Pin-Anzahl — 3 (Drain, Gate, Source)
Packaging — Tape & Reel (suffix HR3)

Datenblätter & Ressourcen

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