MRF6S19100HR3 vs MRF6S27085HR3 Comparação

Comparação detalhada lado a lado de MRF6S19100HR3 por NXP Semiconductors e MRF6S27085HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Ativo
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF6S19100HR3 MRF6S27085HR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $95,00 $23,75
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRF6S19100HR3 MRF6S27085HR3
Device Type RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) —
Technology N-Channel LDMOS Lateral DMOS (LDMOS)
Operating Frequency Range 1930 MHz to 1990 MHz —
Output Power (P1dB, Avg) 22 W (N-CDMA Average) —
Power Gain 16.1 dB (typical at 1.99 GHz) —
Drain Voltage (Vds) 28 V —
Quiescent Drain Current (Idq) 900 mA (typical) —
Encapsulamento / Caixa NI-780H-2L (Case 465-06, Style 1) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
Tipo de montagem Flanged / Screw-mount with ceramic body Flange / Chassis mount with bolt-down thermal pad
Lead Style Dual blade (HR3 suffix) —
Operating Mode Class AB (linear) —
Target Applications N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL —
Status RoHS Compliant (per NXP product page) Compliant per Freescale/NXP material declaration
Tipo de transistor — LDMOS, N-Channel, Enhancement-Mode, Lateral
Application — RF Power Amplifier
Operating Frequency — 2600 MHz to 2700 MHz
Test Frequency — 2.66 GHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Contagem de pinos — 3 (Drain, Gate, Source)
Packaging — Tape & Reel (suffix HR3)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação