MRF6S21100NR1 vs MRF8S21100HSR3 Comparison
Detailed side-by-side comparison of MRF6S21100NR1 by NXP Semiconductors and MRF8S21100HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF6S21100NR1 | MRF8S21100HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $21.24 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Transistor Type | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| Package / Case | TO-270 WB-4 (Case 1486-03, Style 1) | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Mounting Type | Surface Mount (plastic overmold) | Chassis / flange mount, screw-down |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| RoHS Status | [DATA_NEEDED: confirm RoHS compliance status] | Compliant (per NXP product family) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |