MRF6S21100NR1 vs MRF8S21100HSR3 Comparación
Comparación detallada lado a lado de MRF6S21100NR1 por NXP Semiconductors y MRF8S21100HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S21100NR1 | MRF8S21100HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $21,24 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| Encapsulado / Carcasa | TO-270 WB-4 (Case 1486-03, Style 1) | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Tipo de montaje | Surface Mount (plastic overmold) | Chassis / flange mount, screw-down |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| Estado RoHS | [DATA_NEEDED: confirm RoHS compliance status] | Compliant (per NXP product family) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |