MRF6S21100NR1 vs MRF8S21100HSR3 Comparaison
Comparaison détaillée côte à côte de MRF6S21100NR1 par NXP Semiconductors et MRF8S21100HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S21100NR1 | MRF8S21100HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $21,24 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| Boîtier / Format | TO-270 WB-4 (Case 1486-03, Style 1) | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Type de montage | Surface Mount (plastic overmold) | Chassis / flange mount, screw-down |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| Statut RoHS | [DATA_NEEDED: confirm RoHS compliance status] | Compliant (per NXP product family) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |