MRF6S21100NR1 vs MRF8S21100HSR3 Vergleich
Detaillierter Direktvergleich von MRF6S21100NR1 von NXP Semiconductors und MRF8S21100HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF6S21100NR1 | MRF8S21100HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $21,24 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) | LDMOS (Laterally Diffused MOSFET) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) | — |
| Drain Voltage (VDD) | 28 V | — |
| Drain Current (Continuous) | 1.05 A | — |
| Drain Current (Pulsed) | [DATA_NEEDED: pulsed drain current value] | — |
| Power Gain | 14.5 dB typical at 2.11 GHz | — |
| Output Power (Pout) | 23 W average (W-CDMA) | — |
| Quiescent Current (IDQ) | 1600 mA | — |
| Gehäuse / Bauform | TO-270 WB-4 (Case 1486-03, Style 1) | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Montageart | Surface Mount (plastic overmold) | Chassis / flange mount, screw-down |
| Operating Mode | Class AB | — |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier | — |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) | — |
| RoHS-Status | [DATA_NEEDED: confirm RoHS compliance status] | Compliant (per NXP product family) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Configuration | — | Single, push-pull N/A |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |