MRF6S27015GNR1 vs MRF6S18100NBR1 Comparison
Detailed side-by-side comparison of MRF6S27015GNR1 by NXP Semiconductors and MRF6S18100NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6S27015GNR1 | MRF6S18100NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.50 | $68.90 |
| Manufacturer | NXP Semiconductors | — |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Package | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | — |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | Single, common-source |
| Mounting Type | Surface Mount (gull-wing leads) | Surface Mount / Flange Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| RoHS Status | Compliant | Compliant (per NXP product page) |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Transistor Type | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Package / Case | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |