MRF6S27015GNR1 vs MRF6S18100NBR1 Comparaison
Comparaison détaillée côte à côte de MRF6S27015GNR1 par NXP Semiconductors et MRF6S18100NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6S27015GNR1 | MRF6S18100NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,50 | $68,90 |
| Manufacturer | NXP Semiconductors | — |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Boîtier | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | — |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | Single, common-source |
| Type de montage | Surface Mount (gull-wing leads) | Surface Mount / Flange Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| Statut RoHS | Compliant | Compliant (per NXP product page) |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Type de transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Boîtier / Format | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |