MRF6S27015GNR1 vs MRF6S18100NBR1 Vergleich
Detaillierter Direktvergleich von MRF6S27015GNR1 von NXP Semiconductors und MRF6S18100NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF6S27015GNR1 | MRF6S18100NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,50 | $68,90 |
| Manufacturer | NXP Semiconductors | — |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Gehäuse | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | — |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | Single, common-source |
| Montageart | Surface Mount (gull-wing leads) | Surface Mount / Flange Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| RoHS-Status | Compliant | Compliant (per NXP product page) |
| Lead-Free | Yes | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Transistortyp | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Gehäuse / Bauform | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |