MRF6S27015GNR1 vs MRF6S18100NBR1 Comparación
Comparación detallada lado a lado de MRF6S27015GNR1 por NXP Semiconductors y MRF6S18100NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MRF6S27015GNR1 | MRF6S18100NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,50 | $68,90 |
| Manufacturer | NXP Semiconductors | — |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Encapsulado | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | — |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | Single, common-source |
| Tipo de montaje | Surface Mount (gull-wing leads) | Surface Mount / Flange Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| Estado RoHS | Compliant | Compliant (per NXP product page) |
| Lead-Free | Yes | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Tipo de transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | — | RF Power Amplifier (GSM/GSM EDGE base station) |
| Frequency Range | — | 1805 MHz to 1990 MHz |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Test Drain Current | — | 900 mA |
| Output Power (Pout) | — | 100 W |
| Power Gain (Gps) | — | 14.5 dB (typical at 1.99 GHz) |
| Drain Efficiency | — | [DATA_NEEDED: drain efficiency %] |
| Encapsulado / Carcasa | — | TO-272 WB-4 |
| Supplier Device Package | — | TO-272 WB-4 |
| Operating Mode | — | Class AB / Class C (per design) |