MRF6S27085HR3 vs MRF6S21100HR3 Comparison

Detailed side-by-side comparison of MRF6S27085HR3 by NXP Semiconductors and MRF6S21100HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Active
NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Active

Specification Comparison

Parameter MRF6S27085HR3 MRF6S21100HR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $23.75 $38.95
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6S27085HR3 —
Transistor Type LDMOS, N-Channel, Enhancement-Mode, Lateral LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Application RF Power Amplifier —
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz —
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB 15.9 dB at 2.14 GHz
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
Package / Case NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount —
Pin Count 3 (Drain, Gate, Source) —
Mounting Type Flange / Chassis mount with bolt-down thermal pad Surface Mount / bolt-down flange
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) —
RoHS Status Compliant per Freescale/NXP material declaration [DATA_NEEDED: explicit RoHS compliance statement]
Configuration — Single
Frequency Band — 2.11 GHz to 2.17 GHz
Output Power (Average) — 23 W (W-CDMA, CW equivalent ~100 W PEP)
Drain-Source Voltage Rating (VDS max) — 68 V
Test Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 950 mA
Test Drain Current — 950 mA
Package — NI-780H-2L (ceramic flange)
Maximum Power Dissipation (Abs) — 388 W
Operating Mode — Class AB (PCN/PCS/cellular, WLL, TD-SCDMA)
Terminal Position — Dual
Lead Free Status — [DATA_NEEDED: RoHS/lead-free explicit statement]

Datasheets & Resources

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