MRF6S27085HR3 vs MRF6S21100HR3 Comparaison
Comparaison détaillée côte à côte de MRF6S27085HR3 par NXP Semiconductors et MRF6S21100HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6S27085HR3 | MRF6S21100HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $23,75 | $38,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6S27085HR3 | — |
| Type de transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Application | RF Power Amplifier | — |
| Operating Frequency | 2600 MHz to 2700 MHz | — |
| Test Frequency | 2.66 GHz | — |
| Output Power (Average, P1dB-rated) | 20 W | — |
| Power Gain (Typ) | 15.5 dB | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating | 68 V | — |
| Operating Drain Voltage | 28 V | — |
| Quiescent Bias Current (Test) | 900 mA | — |
| Boîtier / Format | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount | — |
| Nombre de broches | 3 (Drain, Gate, Source) | — |
| Type de montage | Flange / Chassis mount with bolt-down thermal pad | Surface Mount / bolt-down flange |
| Packaging | Tape & Reel (suffix HR3) | — |
| Technology | Lateral DMOS (LDMOS) | — |
| Statut RoHS | Compliant per Freescale/NXP material declaration | [DATA_NEEDED: explicit RoHS compliance statement] |
| Configuration | — | Single |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Boîtier | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |
| Lead Free Status | — | [DATA_NEEDED: RoHS/lead-free explicit statement] |