MRF6S27085HR3 vs MRF6S21100HR3 Comparación
Comparación detallada lado a lado de MRF6S27085HR3 por NXP Semiconductors y MRF6S21100HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
MRF6S27085HR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF6S27085HR3 | MRF6S21100HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $23,75 | $38,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF6S27085HR3 | — |
| Tipo de transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Application | RF Power Amplifier | — |
| Operating Frequency | 2600 MHz to 2700 MHz | — |
| Test Frequency | 2.66 GHz | — |
| Output Power (Average, P1dB-rated) | 20 W | — |
| Power Gain (Typ) | 15.5 dB | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating | 68 V | — |
| Operating Drain Voltage | 28 V | — |
| Quiescent Bias Current (Test) | 900 mA | — |
| Encapsulado / Carcasa | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount | — |
| Recuento de pines | 3 (Drain, Gate, Source) | — |
| Tipo de montaje | Flange / Chassis mount with bolt-down thermal pad | Surface Mount / bolt-down flange |
| Packaging | Tape & Reel (suffix HR3) | — |
| Technology | Lateral DMOS (LDMOS) | — |
| Estado RoHS | Compliant per Freescale/NXP material declaration | [DATA_NEEDED: explicit RoHS compliance statement] |
| Configuration | — | Single |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Encapsulado | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |
| Lead Free Status | — | [DATA_NEEDED: RoHS/lead-free explicit statement] |