MRF6S27085HR3 vs MRF6S21100HR3 Vergleich

Detaillierter Direktvergleich von MRF6S27085HR3 von NXP Semiconductors und MRF6S21100HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Aktiv
NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S27085HR3 MRF6S21100HR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $23,75 $38,95
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6S27085HR3 —
Transistortyp LDMOS, N-Channel, Enhancement-Mode, Lateral LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Application RF Power Amplifier —
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz —
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB 15.9 dB at 2.14 GHz
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
Gehäuse / Bauform NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount —
Pin-Anzahl 3 (Drain, Gate, Source) —
Montageart Flange / Chassis mount with bolt-down thermal pad Surface Mount / bolt-down flange
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) —
RoHS-Status Compliant per Freescale/NXP material declaration [DATA_NEEDED: explicit RoHS compliance statement]
Configuration — Single
Frequency Band — 2.11 GHz to 2.17 GHz
Output Power (Average) — 23 W (W-CDMA, CW equivalent ~100 W PEP)
Drain-Source Voltage Rating (VDS max) — 68 V
Test Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 950 mA
Test Drain Current — 950 mA
Gehäuse — NI-780H-2L (ceramic flange)
Maximum Power Dissipation (Abs) — 388 W
Operating Mode — Class AB (PCN/PCS/cellular, WLL, TD-SCDMA)
Terminal Position — Dual
Lead Free Status — [DATA_NEEDED: RoHS/lead-free explicit statement]

Datenblätter & Ressourcen

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