MRF6V3090NR1 vs MRF6V3090NBR1 Comparison
Detailed side-by-side comparison of MRF6V3090NR1 by NXP Semiconductors and MRF6V3090NBR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRF6V3090NR1 | MRF6V3090NBR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $59.90 | $44.50 |
| Transistor Type | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | — |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Mounting Type | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Screw-Mount Chassis |
| Operating Junction Temperature | -40C to +200C (max TJ) | — |
| Thermal Resistance | [DATA_NEEDED: theta_JC value C/W] | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| RoHS Status | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | unknown |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Application | — | RF Power Amplifier |
| Frequency Band | — | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | — | 90 W at 860 MHz, 50 V |
| Power Gain | — | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | — | 50 V DC |
| Drain Current (Id) | — | 350 mA (test condition) |
| Package / Case | — | TO-272 WB-4 (ceramic) |
| Configuration | — | Single N-Channel MOSFET |
| Channel Mode | — | Enhancement-mode |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |
| Junction-to-Case Thermal Resistance | — | [DATA_NEEDED: theta_jc] |
| Lead-Free | — | unknown |
| Qualification | — | Not Qualified (per partstack listing) |