MRF6V3090NR1 vs MRF6V3090NBR1 Comparação
Comparação detalhada lado a lado de MRF6V3090NR1 por NXP Semiconductors e MRF6V3090NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF6V3090NR1 | MRF6V3090NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $59,90 | $44,50 |
| Tipo de transistor | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | — |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Tipo de montagem | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Screw-Mount Chassis |
| Temperatura de junção de operação | -40C to +200C (max TJ) | — |
| Resistência térmica | [DATA_NEEDED: theta_JC value C/W] | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | unknown |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Application | — | RF Power Amplifier |
| Frequency Band | — | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | — | 90 W at 860 MHz, 50 V |
| Power Gain | — | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | — | 50 V DC |
| Drain Current (Id) | — | 350 mA (test condition) |
| Encapsulamento / Caixa | — | TO-272 WB-4 (ceramic) |
| Configuration | — | Single N-Channel MOSFET |
| Channel Mode | — | Enhancement-mode |
| Faixa de temperatura de operação | — | [DATA_NEEDED: operating temperature range] |
| Resistência térmica junção-encapsulamento | — | [DATA_NEEDED: theta_jc] |
| Lead-Free | — | unknown |
| Qualification | — | Not Qualified (per partstack listing) |