MRF6V3090NR1 vs MRF6V3090NBR1 Vergleich
Detaillierter Direktvergleich von MRF6V3090NR1 von NXP Semiconductors und MRF6V3090NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF6V3090NR1 | MRF6V3090NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $59,90 | $44,50 |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Drain-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 350 mA | — |
| Frequency Range | 470 MHz to 1215 MHz | — |
| Test Frequency | 860 MHz | — |
| Output Power (CW, Pout) | 90 W | — |
| Power Gain (typical) | 22 dB at 860 MHz | — |
| Drain Efficiency (typical) | [DATA_NEEDED: drain efficiency %] | — |
| VSWR Tolerance | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW | 10:1 all phase angles, 50 V, 860 MHz, 90 W CW |
| Input Power (Pin) | [DATA_NEEDED: input drive level for 90 W Pout] | — |
| Package Type | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) | — |
| Montageart | Surface Mount / Flange Mount with bolt-down heatsink | Surface Mount / Screw-Mount Chassis |
| Betriebs-Sperrschichttemperatur | -40C to +200C (max TJ) | — |
| Wärmewiderstand | [DATA_NEEDED: theta_JC value C/W] | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] | unknown |
| Reel Quantity (R1 suffix) | 500 per reel (R1 = 500 unit reel) | — |
| Application | — | RF Power Amplifier |
| Frequency Band | — | 470 MHz to 1215 MHz |
| Typical Output Power (CW) | — | 90 W at 860 MHz, 50 V |
| Power Gain | — | 22 dB at 860 MHz, 90 W CW |
| Drain Supply Voltage (Vdd) | — | 50 V DC |
| Drain Current (Id) | — | 350 mA (test condition) |
| Gehäuse / Bauform | — | TO-272 WB-4 (ceramic) |
| Configuration | — | Single N-Channel MOSFET |
| Channel Mode | — | Enhancement-mode |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Wärmewiderstand Sperrschicht-Gehäuse | — | [DATA_NEEDED: theta_jc] |
| Lead-Free | — | unknown |
| Qualification | — | Not Qualified (per partstack listing) |