MRF6V4300NBR5 vs MRF6V3090NR1 Comparison
Detailed side-by-side comparison of MRF6V4300NBR5 by NXP Semiconductors and MRF6V3090NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
MRF6V4300NBR5 ✓ Active
Specification Comparison
| Parameter | MRF6V4300NBR5 | MRF6V3090NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $125.00 | $59.90 |
| Transistor Type | RF Power MOSFET, N-Channel Enhancement-Mode Lateral | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (Vds) Maximum | 110 V | — |
| Continuous Drain Current (Id) | [DATA_NEEDED: continuous drain current rating] | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 450 MHz | 860 MHz |
| Output Power (Pout) | 300 W CW | — |
| Power Gain (Gps) | 22 dB typical at 450 MHz, 50 V | — |
| Operating Drain Voltage (Vdd) Typical | 50 V | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Pd maximum] | — |
| Noise Figure (NF) Typical | [DATA_NEEDED: noise figure typical] | — |
| Input Matching | Unmatched (external matching required) | — |
| VSWR Capability | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference | — |
| Package | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) | — |
| Mounting Type | Surface Mount / Flange Mount with screws | Surface Mount / Flange Mount with bolt-down heatsink |
| Operating Temperature Range | [DATA_NEEDED: junction/operating temperature] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] |
| Tape & Reel Packaging | Yes (suffix R5 indicates 250-unit reel) | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 350 mA |
| Frequency Range | — | 470 MHz to 1215 MHz |
| Output Power (CW, Pout) | — | 90 W |
| Power Gain (typical) | — | 22 dB at 860 MHz |
| Drain Efficiency (typical) | — | [DATA_NEEDED: drain efficiency %] |
| VSWR Tolerance | — | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Input Power (Pin) | — | [DATA_NEEDED: input drive level for 90 W Pout] |
| Package Type | — | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Operating Junction Temperature | — | -40C to +200C (max TJ) |
| Thermal Resistance | — | [DATA_NEEDED: theta_JC value C/W] |
| MSL Level | — | [DATA_NEEDED: MSL rating] |
| Reel Quantity (R1 suffix) | — | 500 per reel (R1 = 500 unit reel) |