MRF6V4300NBR5 vs MRF6V3090NR1 Vergleich

Detaillierter Direktvergleich von MRF6V4300NBR5 von NXP Semiconductors und MRF6V3090NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6V4300NBR5 MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP

MRF6V4300NBR5 ✓ Aktiv
NXP Semiconductors
MRF6V3090NR1 MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP

MRF6V3090NR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6V4300NBR5 MRF6V3090NR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $125,00 $59,90
Transistortyp RF Power MOSFET, N-Channel Enhancement-Mode Lateral N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Manufacturer NXP Semiconductors (formerly Freescale) —
Drain-Source Voltage (Vds) Maximum 110 V —
Continuous Drain Current (Id) [DATA_NEEDED: continuous drain current rating] —
Operating Frequency Range 10 MHz to 600 MHz —
Test Frequency 450 MHz 860 MHz
Output Power (Pout) 300 W CW —
Power Gain (Gps) 22 dB typical at 450 MHz, 50 V —
Operating Drain Voltage (Vdd) Typical 50 V —
Power Dissipation (Pd) [DATA_NEEDED: Pd maximum] —
Noise Figure (NF) Typical [DATA_NEEDED: noise figure typical] —
Input Matching Unmatched (external matching required) —
VSWR Capability 10:1 VSWR at all phase angles, 50 V, 860 MHz reference —
Gehäuse TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) —
Montageart Surface Mount / Flange Mount with screws Surface Mount / Flange Mount with bolt-down heatsink
Betriebstemperaturbereich [DATA_NEEDED: junction/operating temperature] —
RoHS-Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt]
Tape & Reel Packaging Yes (suffix R5 indicates 250-unit reel) —
Technology — LDMOS (Laterally Diffused MOSFET)
Drain-Source Voltage (VDS) — 50 V
Continuous Drain Current (ID) — 350 mA
Frequency Range — 470 MHz to 1215 MHz
Output Power (CW, Pout) — 90 W
Power Gain (typical) — 22 dB at 860 MHz
Drain Efficiency (typical) — [DATA_NEEDED: drain efficiency %]
VSWR Tolerance — 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW
Input Power (Pin) — [DATA_NEEDED: input drive level for 90 W Pout]
Package Type — TO-270 WB-4 (TO-272-4 family, ceramic air-cavity)
Betriebs-Sperrschichttemperatur — -40C to +200C (max TJ)
Wärmewiderstand — [DATA_NEEDED: theta_JC value C/W]
MSL-Level — [DATA_NEEDED: MSL rating]
Reel Quantity (R1 suffix) — 500 per reel (R1 = 500 unit reel)

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