MRF6V4300NBR5 vs MRF6V3090NR1 Сравнение
Подробное сравнение бок о бок MRF6V4300NBR5 от NXP Semiconductors и MRF6V3090NR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
MRF6V4300NBR5 ✓ Активен
Сравнение характеристик
| Параметр | MRF6V4300NBR5 | MRF6V3090NR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $125,00 | $59,90 |
| Тип транзистора | RF Power MOSFET, N-Channel Enhancement-Mode Lateral | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (Vds) Maximum | 110 V | — |
| Continuous Drain Current (Id) | [DATA_NEEDED: continuous drain current rating] | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 450 MHz | 860 MHz |
| Output Power (Pout) | 300 W CW | — |
| Power Gain (Gps) | 22 dB typical at 450 MHz, 50 V | — |
| Operating Drain Voltage (Vdd) Typical | 50 V | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Pd maximum] | — |
| Noise Figure (NF) Typical | [DATA_NEEDED: noise figure typical] | — |
| Input Matching | Unmatched (external matching required) | — |
| VSWR Capability | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference | — |
| Корпус | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) | — |
| Тип монтажа | Surface Mount / Flange Mount with screws | Surface Mount / Flange Mount with bolt-down heatsink |
| Диапазон рабочих температур | [DATA_NEEDED: junction/operating temperature] | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] |
| Tape & Reel Packaging | Yes (suffix R5 indicates 250-unit reel) | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 350 mA |
| Frequency Range | — | 470 MHz to 1215 MHz |
| Output Power (CW, Pout) | — | 90 W |
| Power Gain (typical) | — | 22 dB at 860 MHz |
| Drain Efficiency (typical) | — | [DATA_NEEDED: drain efficiency %] |
| VSWR Tolerance | — | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Input Power (Pin) | — | [DATA_NEEDED: input drive level for 90 W Pout] |
| Package Type | — | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Рабочая температура перехода | — | -40C to +200C (max TJ) |
| Тепловое сопротивление | — | [DATA_NEEDED: theta_JC value C/W] |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Reel Quantity (R1 suffix) | — | 500 per reel (R1 = 500 unit reel) |