MRF6V4300NBR5 vs MRF6V3090NR1 Comparaison
Comparaison détaillée côte à côte de MRF6V4300NBR5 par NXP Semiconductors et MRF6V3090NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6V4300NBR5 | MRF6V3090NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $125,00 | $59,90 |
| Type de transistor | RF Power MOSFET, N-Channel Enhancement-Mode Lateral | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Drain-Source Voltage (Vds) Maximum | 110 V | — |
| Continuous Drain Current (Id) | [DATA_NEEDED: continuous drain current rating] | — |
| Operating Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 450 MHz | 860 MHz |
| Output Power (Pout) | 300 W CW | — |
| Power Gain (Gps) | 22 dB typical at 450 MHz, 50 V | — |
| Operating Drain Voltage (Vdd) Typical | 50 V | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Pd maximum] | — |
| Noise Figure (NF) Typical | [DATA_NEEDED: noise figure typical] | — |
| Input Matching | Unmatched (external matching required) | — |
| VSWR Capability | 10:1 VSWR at all phase angles, 50 V, 860 MHz reference | — |
| Boîtier | TO-272 WB-4 (NI-1230 ceramic overmolded, bolt-down flange) | — |
| Type de montage | Surface Mount / Flange Mount with screws | Surface Mount / Flange Mount with bolt-down heatsink |
| Plage de température de fonctionnement | [DATA_NEEDED: junction/operating temperature] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS status - ceramic flange packages typically non-RoHS-exempt] |
| Tape & Reel Packaging | Yes (suffix R5 indicates 250-unit reel) | — |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 350 mA |
| Frequency Range | — | 470 MHz to 1215 MHz |
| Output Power (CW, Pout) | — | 90 W |
| Power Gain (typical) | — | 22 dB at 860 MHz |
| Drain Efficiency (typical) | — | [DATA_NEEDED: drain efficiency %] |
| VSWR Tolerance | — | 10:1, all phase angles @ 50 Vdc, 860 MHz, 90 W CW |
| Input Power (Pin) | — | [DATA_NEEDED: input drive level for 90 W Pout] |
| Package Type | — | TO-270 WB-4 (TO-272-4 family, ceramic air-cavity) |
| Température de jonction en fonctionnement | — | -40C to +200C (max TJ) |
| Résistance thermique | — | [DATA_NEEDED: theta_JC value C/W] |
| Niveau MSL | — | [DATA_NEEDED: MSL rating] |
| Reel Quantity (R1 suffix) | — | 500 per reel (R1 = 500 unit reel) |