MRF8P9040NR1 vs MRF8S9220HSR3 Comparison
Detailed side-by-side comparison of MRF8P9040NR1 by NXP Semiconductors and MRF8S9220HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ ActiveNXP Semiconductors
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
MRF8S9220HSR3 ✓ ActiveSpecification Comparison
| Parameter | MRF8P9040NR1 | MRF8S9220HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $24.95 | $96.80 |
| Manufacturer | NXP Semiconductors | — |
| Transistor Type | N-Channel Lateral MOSFET (RF Power) | — |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Operating Frequency Range | 728 MHz to 960 MHz | — |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Package | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | — |
| Mounting Type | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Pin Count | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | — |
| PA Topology Suitability | Class AB, Class C | — |
| MSL Level | 3 | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Package / Case | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Operating Junction Temperature | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |