MRF8P9040NR1 vs MRF8S9220HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8P9040NR1 par NXP Semiconductors et MRF8S9220HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ Actif
Comparaison des spécifications
| Paramètre | MRF8P9040NR1 | MRF8S9220HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $24,95 | $96,80 |
| Manufacturer | NXP Semiconductors | — |
| Type de transistor | N-Channel Lateral MOSFET (RF Power) | — |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Operating Frequency Range | 728 MHz to 960 MHz | — |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Boîtier | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | — |
| Type de montage | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Nombre de broches | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | — |
| PA Topology Suitability | Class AB, Class C | — |
| Niveau MSL | 3 | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Boîtier / Format | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Température de jonction en fonctionnement | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |