MRF8P9040NR1 vs MRF8S9220HSR3 Comparação
Comparação detalhada lado a lado de MRF8P9040NR1 por NXP Semiconductors e MRF8S9220HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
MRF8P9040NR1 ✓ Ativo
Comparação de especificações
| Parâmetro | MRF8P9040NR1 | MRF8S9220HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $24,95 | $96,80 |
| Manufacturer | NXP Semiconductors | — |
| Tipo de transistor | N-Channel Lateral MOSFET (RF Power) | — |
| Technology | HV8 Lateral N-Channel Enhancement-Mode | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Operating Frequency Range | 728 MHz to 960 MHz | — |
| Drain-Source Voltage (Vdss) Max | 70 V | — |
| Continuous Drain Current (Id) | 320 mA (per DigiKey listing) | — |
| Test Drain Supply Voltage | 28 V | — |
| Output Power (Pout) Avg | 4.0 W (CW / modulated at 28 V, 960 MHz) | — |
| Power Gain (Gps) at 960 MHz | 19.1 dB | — |
| Encapsulamento | TO-272 WB-4 (air-cavity overmold, 4 lead + flange) | — |
| Tipo de montagem | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| Contagem de pinos | 4 (Drain on flange) | — |
| Modulation Formats Supported | CDMA, W-CDMA, LTE | — |
| PA Topology Suitability | Class AB, Class C | — |
| Nível MSL | 3 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | Yes (per typical NXP HV8 family) | — |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| Encapsulamento / Caixa | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| Temperatura de junção de operação | — | -65 C to +225 C |
| Lead-Free / RoHS | — | Lead Free (per DigChip listing) |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |