MRF8S21120HSR3 vs MRF8S18120HSR3 Comparison

Detailed side-by-side comparison of MRF8S21120HSR3 by NXP Semiconductors and MRF8S18120HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Active
NXP Semiconductors
MRF8S18120HSR3 MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 ✓ Active

Specification Comparison

Parameter MRF8S21120HSR3 MRF8S18120HSR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $59.95 $65.00
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
Part Number MRF8S21120HSR3 MRF8S18120HSR3
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 2110-2170 MHz —
Output Power (P1dB / average) 28 W average, W-CDMA / LTE —
Drain-Source Breakdown Voltage V(BR)DSS 65 V —
Operating Drain Voltage 28 V —
Power Gain (Typical) 17.6 dB at 2.17 GHz —
Drain Efficiency (Typical) [DATA_NEEDED: datasheet efficiency figure] —
Operating Mode Class AB / Class C —
Package Type NI-780HS (ceramic flange) NI-780S
Case Mounting Source on case (flange grounding) —
Number of Pins 2-pin (Gate, Drain) —
Mounting Style Through-hole / bolt-down flange Surface Mount (ceramic flange)
MSL Level 1 (unlimited) —
RoHS Status RoHS compliant Compliant
Lead-Free Yes —
Transistor Type — LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Drain-Source Voltage (Max) — 65 V
Test Drain Voltage — 28 V
Test Quiescent Current (IDQ) — 800 mA
Operating Frequency — 1805 MHz to 1880 MHz
Center Frequency — 1.81 GHz
Output Power (CW) — 72 W
Power Gain (Typ) — 18.2 dB
Drain Current (Test) — 800 mA
Operating Class — Class AB / Class C
Application — GSM / GSM EDGE cellular base station power amplifiers

Datasheets & Resources

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