MRF8S21120HSR3 vs MRF8S18120HSR3 비교
다음의 상세 나란히 비교: MRF8S21120HSR3 제조: NXP Semiconductors 및 MRF8S18120HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S21120HSR3 | MRF8S18120HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $59.95 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S21120HSR3 | MRF8S18120HSR3 |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 2110-2170 MHz | — |
| Output Power (P1dB / average) | 28 W average, W-CDMA / LTE | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Operating Drain Voltage | 28 V | — |
| Power Gain (Typical) | 17.6 dB at 2.17 GHz | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: datasheet efficiency figure] | — |
| Operating Mode | Class AB / Class C | — |
| Package Type | NI-780HS (ceramic flange) | NI-780S |
| Case Mounting | Source on case (flange grounding) | — |
| 핀 수 | 2-pin (Gate, Drain) | — |
| 장착 스타일 | Through-hole / bolt-down flange | Surface Mount (ceramic flange) |
| MSL 레벨 | 1 (unlimited) | — |
| RoHS 상태 | RoHS compliant | Compliant |
| Lead-Free | Yes | — |
| 트랜지스터 유형 | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Max) | — | 65 V |
| Test Drain Voltage | — | 28 V |
| Test Quiescent Current (IDQ) | — | 800 mA |
| Operating Frequency | — | 1805 MHz to 1880 MHz |
| Center Frequency | — | 1.81 GHz |
| Output Power (CW) | — | 72 W |
| Power Gain (Typ) | — | 18.2 dB |
| Drain Current (Test) | — | 800 mA |
| Operating Class | — | Class AB / Class C |
| Application | — | GSM / GSM EDGE cellular base station power amplifiers |