MRF8S21120HSR3 vs MRF8S18120HSR3 Vergleich

Detaillierter Direktvergleich von MRF8S21120HSR3 von NXP Semiconductors und MRF8S18120HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Aktiv
NXP Semiconductors
MRF8S18120HSR3 MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS

MRF8S18120HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S21120HSR3 MRF8S18120HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $59,95 $65,00
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
Part Number MRF8S21120HSR3 MRF8S18120HSR3
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 2110-2170 MHz —
Output Power (P1dB / average) 28 W average, W-CDMA / LTE —
Drain-Source Breakdown Voltage V(BR)DSS 65 V —
Operating Drain Voltage 28 V —
Power Gain (Typical) 17.6 dB at 2.17 GHz —
Drain Efficiency (Typical) [DATA_NEEDED: datasheet efficiency figure] —
Operating Mode Class AB / Class C —
Package Type NI-780HS (ceramic flange) NI-780S
Case Mounting Source on case (flange grounding) —
Anzahl der Pins 2-pin (Gate, Drain) —
Montagestil Through-hole / bolt-down flange Surface Mount (ceramic flange)
MSL-Level 1 (unlimited) —
RoHS-Status RoHS compliant Compliant
Lead-Free Yes —
Transistortyp — LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Drain-Source Voltage (Max) — 65 V
Test Drain Voltage — 28 V
Test Quiescent Current (IDQ) — 800 mA
Operating Frequency — 1805 MHz to 1880 MHz
Center Frequency — 1.81 GHz
Output Power (CW) — 72 W
Power Gain (Typ) — 18.2 dB
Drain Current (Test) — 800 mA
Operating Class — Class AB / Class C
Application — GSM / GSM EDGE cellular base station power amplifiers

Datenblätter & Ressourcen

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