MRF8S21120HSR3 vs MRF8S18120HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S21120HSR3 par NXP Semiconductors et MRF8S18120HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
MRF8S18120HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S21120HSR3 | MRF8S18120HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $59,95 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S21120HSR3 | MRF8S18120HSR3 |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 2110-2170 MHz | — |
| Output Power (P1dB / average) | 28 W average, W-CDMA / LTE | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Operating Drain Voltage | 28 V | — |
| Power Gain (Typical) | 17.6 dB at 2.17 GHz | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: datasheet efficiency figure] | — |
| Operating Mode | Class AB / Class C | — |
| Package Type | NI-780HS (ceramic flange) | NI-780S |
| Case Mounting | Source on case (flange grounding) | — |
| Nombre de broches | 2-pin (Gate, Drain) | — |
| Style de montage | Through-hole / bolt-down flange | Surface Mount (ceramic flange) |
| Niveau MSL | 1 (unlimited) | — |
| Statut RoHS | RoHS compliant | Compliant |
| Lead-Free | Yes | — |
| Type de transistor | — | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Max) | — | 65 V |
| Test Drain Voltage | — | 28 V |
| Test Quiescent Current (IDQ) | — | 800 mA |
| Operating Frequency | — | 1805 MHz to 1880 MHz |
| Center Frequency | — | 1.81 GHz |
| Output Power (CW) | — | 72 W |
| Power Gain (Typ) | — | 18.2 dB |
| Drain Current (Test) | — | 800 mA |
| Operating Class | — | Class AB / Class C |
| Application | — | GSM / GSM EDGE cellular base station power amplifiers |