MRFG35010NR5 vs MRFG35003NR5 Comparison

Detailed side-by-side comparison of MRFG35010NR5 by NXP Semiconductors and MRFG35003NR5 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete

Specification Comparison

Parameter MRFG35010NR5 MRFG35003NR5
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $9.60 $10.95
Transistor Type pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz 3.55 GHz (test)
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A —
Package / Case PLD-1.5 PLD-1.5 (ceramic flange, bolt-down)
Supplier Device Package PLD-1.5 PLD-1.5
Mounting Type Surface Mount Chassis / flange mount with screws
Configuration Single, unmatched Single, unmatched die
Application WLL/MMDS/BWA/UMTS driver stages —
RoHS Status [DATA_NEEDED: rohs status] —
Lead Free Status [DATA_NEEDED: lead free status] Lead-free (per NXP product page)
Frequency Range — Up to 3.6 GHz
Drain-Source Rated Voltage — 15 V
Continuous Drain Current — 1.3 A
Test Drain Voltage — 12 V
Test Drain Current — 55 mA
Power Gain (typ) — 11.5 dB @ 3.55 GHz
Output Power — 3 W
Operating Class — Class AB linear
Packaging — Tape & Reel (R5 suffix)

Datasheets & Resources

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