MRFG35010NR5 vs MRFG35003NR5 Vergleich

Detaillierter Direktvergleich von MRFG35010NR5 von NXP Semiconductors und MRFG35003NR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRFG35010NR5 MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 - 9W pHEMT RF Power FET 3.55GHz | NXP

MRFG35010NR5 Obsolete
NXP Semiconductors
MRFG35003NR5 MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 - 3W 3.55GHz pHEMT RF Power FET | NXP

MRFG35003NR5 Obsolete

Spezifikationsvergleich

Parameter MRFG35010NR5 MRFG35003NR5
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Obsolete Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $9,60 $10,95
Transistortyp pHEMT FET pHEMT FET
Technology GaAs pHEMT GaAs pHEMT
Frequency 3.55 GHz 3.55 GHz (test)
Operating Frequency Range Up to 3.6 GHz —
Gain 10 dB (typical at 3.55 GHz) —
Output Power (CW) 9 W —
Voltage - Rated 15 V —
Voltage - Test 12 V —
Current - Test 180 mA —
Current Rating 2.9 A —
Gehäuse / Bauform PLD-1.5 PLD-1.5 (ceramic flange, bolt-down)
Supplier Device Package PLD-1.5 PLD-1.5
Montageart Surface Mount Chassis / flange mount with screws
Configuration Single, unmatched Single, unmatched die
Application WLL/MMDS/BWA/UMTS driver stages —
RoHS-Status [DATA_NEEDED: rohs status] —
Lead Free Status [DATA_NEEDED: lead free status] Lead-free (per NXP product page)
Frequency Range — Up to 3.6 GHz
Drain-Source Rated Voltage — 15 V
Continuous Drain Current — 1.3 A
Test Drain Voltage — 12 V
Test Drain Current — 55 mA
Power Gain (typ) — 11.5 dB @ 3.55 GHz
Output Power — 3 W
Operating Class — Class AB linear
Packaging — Tape & Reel (R5 suffix)

Datenblätter & Ressourcen

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