MT25QL02GCBB8E12-0AUT vs W25H02JVTBIM Comparison

Detailed side-by-side comparison of MT25QL02GCBB8E12-0AUT by Micron Technology and W25H02JVTBIM by Winbond. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT25QL02GCBB8E12-0AUT MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT ✓ Active

Specification Comparison

Parameter MT25QL02GCBB8E12-0AUT W25H02JVTBIM
Brand Micron Technology Winbond
Category Flash Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.65 $2.38
Memory Type NOR Flash, Serial (SPI) Serial NOR Flash
Memory Capacity 2 Gbit (256 MB) —
Organization 256M x 8 —
Interface SPI, Dual SPI, Quad I/O SPI / Dual SPI / Quad SPI / QPI / DTR
Maximum Clock Frequency 133 MHz —
Supply Voltage 2.7 V to 3.6 V —
Programming Voltage 3 V —
Operating Temperature -40C to +125C -40C to +85C
Package 24-T-PBGA (6x8 mm) 24-ball TFBGA (8x6 mm)
Mounting Type Surface Mount Surface Mount
Endurance 100000 write/erase cycles —
Qualification AEC-Q100 (automotive) —
Features XIP, write enable latch, power-on reset, hardware/software write protection, absolute write protection, extended address access —
RoHS Status Compliant Compliant
Marking Code RW340 —
Supply Voltage Class 3 V (MT25QL series) —
Access Protocol Support Standard/Dual-Output/Dual-I/O/Quad-Output/Quad-I/O SPI —
Density — 2 Gbit (256M x 8)
Maximum Clock Rate — 133 MHz
Equivalent Throughput (Quad DTR) — 416 MHz (50 MB/s)
Access Time — 7.5 ns
Supply Voltage (VCC) — 2.7 V to 3.6 V
Sector Size — 4 KB uniform
Block Size — 32 KB and 64 KB
Program/Erase Endurance — 100,000 cycles per sector
Data Retention — 20 years
Halogen Free — Yes
JEDEC Manufacturer ID — 0xEF (Winbond)

Datasheets & Resources

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